Ixys
IXGN120N60A3D1
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXGN120N60A3D1 technical specifications.
General
Package/Case
SOT-227-4
Collector Emitter Breakdown Voltage
600V
Collector-emitter Voltage-Max
1.35V
Input
Standard
Input Capacitance
14.8nF
Lead Free
Lead Free
Max Collector Current
200A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
595W
Mount
Chassis Mount
NTC Thermistor
No
Package Quantity
10
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
GenX3™
Turn-Off Delay Time
410ns
Turn-On Delay Time
39ns
Weight
1.340411oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGN120N60A3D1 Datasheet
Download the complete datasheet for Ixys IXGN120N60A3D1 to view detailed technical specifications.
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