The IXGP12N100A is a 1kV insulated gate bipolar transistor with a maximum collector current of 24A and maximum power dissipation of 100W. It is packaged in a TO-220-3 flange mount configuration and is available in quantities of 50. The device is RoHS compliant and suitable for use in a variety of applications. Operating temperature range is not specified, but the device is designed for use in high-power applications.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXGP12N100A technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector-emitter Voltage-Max | 4V |
| Input Type | STANDARD |
| Max Collector Current | 24A |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | IXGP12N100 |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGP12N100A Datasheet
Download the complete datasheet for Ixys IXGP12N100A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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