The IXGP12N120A2 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 24A. It is packaged in a TO-220AB, 3 PIN package and is designed for through hole mounting. The transistor has a maximum power dissipation of 75W and operates within a temperature range of -55°C to 150°C. The IXGP12N120A2 is RoHS compliant and is available in a quantity of 50 per rail/tube packaging.
PackageTO-220-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXGP12N120A2 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3V |
| Input Type | STANDARD |
| Max Collector Current | 24A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Weight | 0.08113oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGP12N120A2 Datasheet
Download the complete datasheet for Ixys IXGP12N120A2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
