Ixys
IXGP16N60B2D1
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXGP16N60B2D1 technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.3V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.95V
Input Type
STANDARD
Max Collector Current
40A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Reverse Recovery Time
30ns
RoHS Compliant
Yes
Series
HiPerFAST™
Weight
0.08113oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGP16N60B2D1 Datasheet
Download the complete datasheet for Ixys IXGP16N60B2D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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