The IXGP20N120B is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 40A. It is packaged in a TO-220-3 case and is designed for through hole mounting. The device is RoHS compliant and has a maximum operating temperature of 150°C, with a minimum operating temperature of -55°C. The IXGP20N120B has a maximum power dissipation of 190W and is available in quantities of 50 per rail or tube packaging.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXGP20N120B technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.4V |
| Input Type | STANDARD |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Weight | 0.08113oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGP20N120B Datasheet
Download the complete datasheet for Ixys IXGP20N120B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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