The IXGP20N120BD1 is a TO-220-3 packaged insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 40A. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 190W. The device is RoHS compliant and is available in a rail/tube packaging with 50 units per package.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXGP20N120BD1 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.4V |
| Input Type | STANDARD |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | IXGP20N120 |
| Weight | 0.08113oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGP20N120BD1 Datasheet
Download the complete datasheet for Ixys IXGP20N120BD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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