Ixys
IXGP2N100A
Insulated Gate Bipolar Transistor, 4A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXGP2N100A technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
1kV
Collector Emitter Voltage (VCEO)
1kV
Collector-emitter Voltage-Max
3.5V
Input Type
STANDARD
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
IXGP2N100
Weight
0.08113oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGP2N100A Datasheet
Download the complete datasheet for Ixys IXGP2N100A to view detailed technical specifications.
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