The IXGP30N60B2 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 70A. It is packaged in a TO-220-3 package and is designed for through-hole mounting. The transistor operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 190W. The IXGP30N60B2 is compliant with RoHS regulations and is available in quantities of 50 per rail/tube packaging.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXGP30N60B2 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.08113oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGP30N60B2 Datasheet
Download the complete datasheet for Ixys IXGP30N60B2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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