IXGP42N30C3

Insulated Gate Bipolar Transistor, 250A I(C), 300V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

PackageTO-220-3

MountingThrough Hole

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Ixys IXGP42N30C3 technical specifications.

Package/Case

TO-220-3

Collector Emitter Breakdown Voltage

300V

Collector-emitter Voltage-Max

1.85V

Input Type

STANDARD

Max Collector Current

42A

Max Power Dissipation

223W

Mount

Through Hole

Package Quantity

Packaging

Rail/Tube

RoHS Compliant

Yes

Series

GenX3™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.