The IXGP42N30C3 is a 300V insulated gate bipolar transistor with a maximum collector current of 42A and a maximum power dissipation of 223W. It is packaged in a TO-220-3 package and is available in quantities of 50. The device is RoHS compliant and suitable for use in a variety of applications. It is designed for use in high-power switching applications and is suitable for use in environments with temperatures up to 150°C.
PackageTO-220-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXGP42N30C3 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 1.85V |
| Input Type | STANDARD |
| Max Collector Current | 42A |
| Max Power Dissipation | 223W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGP42N30C3 Datasheet
Download the complete datasheet for Ixys IXGP42N30C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
