The IXGP7N60B is a 600V insulated gate bipolar transistor with a maximum collector current of 14A. It features a TO-220-3 package and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. With a maximum power dissipation of 54W, this transistor is suitable for a variety of high-power applications.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXGP7N60B technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Input Type | STANDARD |
| Max Collector Current | 14A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.08113oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGP7N60B Datasheet
Download the complete datasheet for Ixys IXGP7N60B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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