Ixys
IXGP8N100
Insulated Gate Bipolar Transistor, 16A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXGP8N100 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 600ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.08113oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGP8N100 Datasheet
Download the complete datasheet for Ixys IXGP8N100 to view detailed technical specifications.
No datasheet is available for this part.