The IXGQ20N120B is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 40A. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 190W. The device is packaged in a through-hole package and is compliant with RoHS regulations.
MountingThrough Hole
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Technical Specifications
Ixys IXGQ20N120B technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.4V |
| Collector-emitter Voltage-Max | 3.4V |
| Input Type | STANDARD |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 40ns |
| RoHS Compliant | Yes |
| Weight | 0.194007oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGQ20N120B Datasheet
Download the complete datasheet for Ixys IXGQ20N120B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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