IXGQ240N30PB

Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN

MountingThrough Hole

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Ixys IXGQ240N30PB technical specifications.

Collector Emitter Breakdown Voltage

300V

Collector-emitter Voltage-Max

1.85V

Input Type

STANDARD

Max Collector Current

240A

Max Power Dissipation

500W

Mount

Through Hole

Package Quantity

Packaging

Rail/Tube

RoHS Compliant

Yes

Series

IXGQ240N30

Weight

0.194007oz

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.