The IXGQ50N60B4D1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 100A. It has a maximum power dissipation of 300W and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
MountingThrough Hole
Power300W
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Technical Specifications
Ixys IXGQ50N60B4D1 technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGQ50N60B4D1 Datasheet
Download the complete datasheet for Ixys IXGQ50N60B4D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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