Ixys
IXGQ50N60C4D1
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
MountingThrough Hole
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Technical Specifications
Ixys IXGQ50N60C4D1 technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector-emitter Voltage-Max
2.3V
Input Type
STANDARD
Max Collector Current
90A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Reverse Recovery Time
25ns
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Ixys IXGQ50N60C4D1 Datasheet
Download the complete datasheet for Ixys IXGQ50N60C4D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.