The IXGR120N60C2 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A and a maximum power dissipation of 300W. It is packaged in a plastic, 3-pin package and is suitable for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It is not radiation hardened and is not compliant with SVHC regulations.
MountingThrough Hole
PolarityNPN
Power300W
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Technical Specifications
Ixys IXGR120N60C2 technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFAST™, Lightspeed 2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGR120N60C2 Datasheet
Download the complete datasheet for Ixys IXGR120N60C2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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