Ixys
IXGR24N120C3D1
Insulated Gate Bipolar Transistor, 48A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, TO-247AD, 3 PIN
MountingThrough Hole
Power200W
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Technical Specifications
Ixys IXGR24N120C3D1 technical specifications.
General
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
3.6V
Collector-emitter Voltage-Max
4.2V
Input Type
STANDARD
Max Collector Current
48A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
200W
Reverse Recovery Time
220ns
RoHS Compliant
Yes
Series
GenX3™
Compliance
RoHS
Compliant
Datasheet
Ixys IXGR24N120C3D1 Datasheet
Download the complete datasheet for Ixys IXGR24N120C3D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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