Ixys
IXGR32N170AH1
Insulated Gate Bipolar Transistor, 26A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, ISOPLUS247, 3 PIN
MountingThrough Hole
Power200W
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Technical Specifications
Ixys IXGR32N170AH1 technical specifications.
General
Collector Emitter Breakdown Voltage
1.7kV
Collector Emitter Saturation Voltage
4.2V
Collector Emitter Voltage (VCEO)
1.7kV
Collector-emitter Voltage-Max
5.2V
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
26A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
30
Packaging
Bulk
Power Dissipation
200W
Reach SVHC Compliant
No
Reverse Recovery Time
230ns
RoHS Compliant
Yes
Turn-Off Delay Time
270ns
Turn-On Delay Time
46ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXGR32N170AH1 Datasheet
Download the complete datasheet for Ixys IXGR32N170AH1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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