Ixys
IXGR48N60B3D1
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
MountingThrough Hole
Power150W
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Technical Specifications
Ixys IXGR48N60B3D1 technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.77V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.1V
Input Type
STANDARD
Max Collector Current
60A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
150W
Reverse Recovery Time
100ns
RoHS Compliant
Yes
Series
GenX3™
Compliance
RoHS
Compliant
Datasheet
Ixys IXGR48N60B3D1 Datasheet
Download the complete datasheet for Ixys IXGR48N60B3D1 to view detailed technical specifications.
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