The IXGR50N60BD1 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A and a maximum power dissipation of 250W. It is packaged in a 3-pin ISOPLUS247 package and is available in quantities of 30. The device is RoHS compliant and has a reverse recovery time of 35ns. It can operate over a temperature range of -55°C to 150°C.
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXGR50N60BD1 technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGR50N60BD1 Datasheet
Download the complete datasheet for Ixys IXGR50N60BD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
