Ixys
IXGT28N120BD1
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN
PackageTO-268-3
MountingSurface Mount
Quick Jump:
Technical Specifications
Ixys IXGT28N120BD1 technical specifications.
General
Package/Case
TO-268-3
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.5V
Input Type
STANDARD
Max Collector Current
50A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Surface Mount
Package Quantity
1
Packaging
Bulk
Reverse Recovery Time
40ns
RoHS Compliant
Yes
Weight
0.158733oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGT28N120BD1 Datasheet
Download the complete datasheet for Ixys IXGT28N120BD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
