The IXGT30N60C2 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 70A and a maximum operating temperature of 150°C. It is packaged in a TO-268-3 surface mount package and is RoHS compliant. The transistor has a collector-emitter breakdown voltage of 600V and a collector-emitter saturation voltage of 2.5V. It is suitable for high-power applications and is part of the HiPerFAST series.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXGT30N60C2 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT30N60C2 Datasheet
Download the complete datasheet for Ixys IXGT30N60C2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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