The IXGT30N60C2D1 is a 600V insulated gate bipolar transistor with a maximum collector current of 70A. It features a TO-268-3 package and is designed for surface mount applications. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 190W. The IXGT30N60C2D1 is compliant with RoHS regulations and is available in a rail/tube packaging configuration with 30 devices per package.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXGT30N60C2D1 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT30N60C2D1 Datasheet
Download the complete datasheet for Ixys IXGT30N60C2D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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