The IXGT50N90B2D1 is a 900V insulated gate bipolar transistor (IGBT) with a maximum collector current of 75A. It features a TO-268-3 package and is designed for surface mount applications. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 400W. The IGBT is part of the HiPerFAST series from Ixys and is packaged in a rail/tube format with 30 devices per package.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXGT50N90B2D1 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 900V |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 900V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 200ns |
| Series | HiPerFAST™ |
| Weight | 0.158733oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT50N90B2D1 Datasheet
Download the complete datasheet for Ixys IXGT50N90B2D1 to view detailed technical specifications.
No datasheet is available for this part.