The IXGT60N60B2 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 75A. It features a TO-268-3 package with a surface mount configuration, suitable for high-temperature operation up to 150°C. The device is RoHS compliant and lead-free, packaged in a rail/tube configuration with 30 units per package. The IXGT60N60B2 is part of the HiPerFAST series and offers fast switching times with a turn-on delay of 28ns and a turn-off delay of 160ns.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXGT60N60B2 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 28ns |
| Weight | 0.158733oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT60N60B2 Datasheet
Download the complete datasheet for Ixys IXGT60N60B2 to view detailed technical specifications.
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