The IXGT6N170 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 12A. It is designed for surface mount applications and has a maximum power dissipation of 75W. The device is packaged in a TO-268-3 plastic package and is RoHS compliant. Operating temperature range is from -55°C to 150°C.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXGT6N170 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 4V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 4V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | IXGT6N170 |
| Weight | 0.158733oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT6N170 Datasheet
Download the complete datasheet for Ixys IXGT6N170 to view detailed technical specifications.
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