The IXGT72N60A3 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 75A and a maximum power dissipation of 540W. It is packaged in a TO-268-3 plastic package and is available in quantities of 30. The device is RoHS compliant and suitable for surface mount applications. Operating temperature range is not specified, but it is likely suitable for a wide range of industrial and commercial applications.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXGT72N60A3 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.35V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Power Dissipation | 540W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT72N60A3 Datasheet
Download the complete datasheet for Ixys IXGT72N60A3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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