The IXGT72N60B3 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A and a maximum power dissipation of 540W. It is packaged in a TO-268-3 plastic package with three pins and is designed for surface mount applications. The device is compliant with RoHS regulations and is available in quantities of 30 per rail or tube packaging. The IXGT72N60B3 is part of the GenX3 series from Ixys.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXGT72N60B3 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Power Dissipation | 540W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT72N60B3 Datasheet
Download the complete datasheet for Ixys IXGT72N60B3 to view detailed technical specifications.
No datasheet is available for this part.