Ixys
IXGX35N120B
Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, PLUS247, 3 PIN
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGX35N120B technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
3.3V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.3V
Input Type
STANDARD
Max Collector Current
70A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
HiPerFAST™
Compliance
RoHS
Compliant
Datasheet
Ixys IXGX35N120B Datasheet
Download the complete datasheet for Ixys IXGX35N120B to view detailed technical specifications.
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