The IXGX50N120C3H1 is an insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 95A. It has a maximum power dissipation of 460W and is packaged in a TO-247-3 case with a through hole mount. The device is RoHS compliant and available in quantities of 30 per rail/tube packaging. The IXGX50N120C3H1 has a reverse recovery time of 75ns and is part of the GenX3 series.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGX50N120C3H1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 4.2V |
| Input Type | STANDARD |
| Max Collector Current | 95A |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 75ns |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGX50N120C3H1 Datasheet
Download the complete datasheet for Ixys IXGX50N120C3H1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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