The IXGX50N60BD1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 75A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device is RoHS compliant and has a maximum operating temperature of 150°C, with a minimum operating temperature of -55°C. It is part of the HiPerFAST series and is packaged in a rail/tube format with 30 devices per package.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGX50N60BD1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGX50N60BD1 Datasheet
Download the complete datasheet for Ixys IXGX50N60BD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.