The IXGX50N60C2D1 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A. It features a TO-247-3 package and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. With a maximum power dissipation of 480W, this IGBT is suitable for high-power applications.
Ixys IXGX50N60C2D1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGX50N60C2D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
