The IXGX72N60A3H1 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A and a maximum power dissipation of 540W. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS standards. The transistor has a collector-emitter breakdown voltage of 600V and a saturation voltage of 1.35V. It features an input capacitance of 6.6nF and a reverse recovery time of 140ns.
PackageTO-247-3
MountingThrough Hole
Power540W
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Technical Specifications
Ixys IXGX72N60A3H1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.35V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.35V |
| Input Capacitance | 6.6nF |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 540W |
| Reverse Recovery Time | 140ns |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGX72N60A3H1 Datasheet
Download the complete datasheet for Ixys IXGX72N60A3H1 to view detailed technical specifications.
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