The IXGX75N250 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 2.5kV and a maximum collector current of 170A. It is packaged in a TO-247-3 case and is designed for through hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 780W. The IXGX75N250 is compliant with RoHS regulations.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGX75N250 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Collector Emitter Voltage (VCEO) | 2.5kV |
| Collector-emitter Voltage-Max | 3.6V |
| Input Type | STANDARD |
| Max Collector Current | 170A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGX75N250 Datasheet
Download the complete datasheet for Ixys IXGX75N250 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.