The IXKH47N60C is a N-CHANNEL MOSFET with a Drain to Source Breakdown Voltage of 600V and a Continuous Drain Current of 47A. It has a Power Dissipation of 290W and is packaged in a TO-247 3 PIN package. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. It features a Drain to Source Resistance of 70mR and a Gate to Source Voltage of 20V.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power290W
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Technical Specifications
Ixys IXKH47N60C technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 70MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 290W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 111ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXKH47N60C Datasheet
Download the complete datasheet for Ixys IXKH47N60C to view detailed technical specifications.
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