
The IXKN40N60C is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It features a continuous drain current of 40A and a drain to source breakdown voltage of 600V. The device is packaged in a SOT-227-4 package and is lead-free and RoHS compliant. It has a maximum power dissipation of 290W and a gate to source voltage of 20V.
Ixys IXKN40N60C technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 290W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 290W |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 110ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXKN40N60C to view detailed technical specifications.
No datasheet is available for this part.