N-channel power MOSFET featuring 600V drain-source breakdown voltage and 75A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 36mΩ drain-source on-resistance. Designed for chassis mounting with screw terminals, it operates within a temperature range of -40°C to 150°C and supports a gate-source voltage of 20V. The component boasts a 560W power dissipation and is RoHS compliant.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power560W
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Technical Specifications
Ixys IXKN75N60C technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 36MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXKN75N60C Datasheet
Download the complete datasheet for Ixys IXKN75N60C to view detailed technical specifications.
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