IXKP10N60C5

Name: IXKP10N60C5 Ixys
Brand: Ixys
SKU: IXKP10N60C5

Power Field-Effect Transistor, 600A I(D), 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

PackageTO-220AB

MountingThrough Hole

PolarityN-CHANNEL

Power109W

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Ixys IXKP10N60C5 technical specifications.

Package/Case	TO-220AB
Continuous Drain Current (ID)	10A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	385mR
Drain to Source Voltage (Vdss)	600V
Gate to Source Voltage (Vgs)	20V
Input Capacitance	790pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	109W
Rds On Max	385mR
RoHS Compliant	Yes
Series	CoolMOS™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.