IXKP13N60C5M

Name: IXKP13N60C5M Ixys
Brand: Ixys
SKU: IXKP13N60C5M

Power Field-Effect Transistor, 6.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ABFP, 3 PIN

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power32W

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Ixys IXKP13N60C5M technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	6.5A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	300mR
Drain to Source Voltage (Vdss)	600V
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.1nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	32W
Rds On Max	300mR
RoHS Compliant	Yes
Series	CoolMOS™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.