N-channel silicon power MOSFET featuring 600V drain-source breakdown voltage and 38A continuous drain current. This through-hole mounted component offers a low 70mΩ drain-source on-resistance and 280W maximum power dissipation. Operating across a temperature range of -40°C to 150°C, it includes a 3.9V threshold voltage and 2.5kV isolation voltage. Designed for efficient switching, it exhibits a 10ns fall time and 110ns turn-off delay.
MountingThrough Hole
PolarityN-CHANNEL
Power280W
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Technical Specifications
Ixys IXKR40N60C technical specifications.
General
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 70MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 280W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3.9V |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXKR40N60C Datasheet
Download the complete datasheet for Ixys IXKR40N60C to view detailed technical specifications.
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