The IXLF19N250A is a 2.5kV insulated gate bipolar transistor with a maximum collector current of 32A and a maximum power dissipation of 250W. It is designed for through hole mounting and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device is RoHS compliant and lead free, and is packaged in a bulk quantity of 25 units.
Current Rating32A
MountingThrough Hole
Power250W
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Technical Specifications
Ixys IXLF19N250A technical specifications.
General
| Collector Emitter Breakdown Voltage | 2.5kV |
| Collector Emitter Saturation Voltage | 3.2V |
| Collector Emitter Voltage (VCEO) | 2.5kV |
| Collector-emitter Voltage-Max | 3.9V |
| Current Rating | 32A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 32A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | IXLF19N250 |
| Turn-Off Delay Time | 600ns |
| Turn-On Delay Time | 100ns |
| DC Rated Voltage | 2.5kV |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXLF19N250A Datasheet
Download the complete datasheet for Ixys IXLF19N250A to view detailed technical specifications.
No datasheet is available for this part.