N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 48A Max Collector Current. Features a 2V Collector-Emitter Saturation Voltage and 250W Max Power Dissipation. This through-hole component is housed in a TO-247-3 package, offering a wide operating temperature range from -55°C to 150°C. It is lead-free and RoHS compliant, with a typical turn-on delay time of 30ns and turn-off delay time of 130ns.
PackageTO-247-3
Current Rating48A
MountingThrough Hole
Power250W
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Technical Specifications
Ixys IXSH30N60B2D1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 48A |
| Height | 21.46mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 48A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Bulk |
| Power Dissipation | 250W |
| Reverse Recovery Time | 30ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 600V |
| Weight | 0.229281oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXSH30N60B2D1 Datasheet
Download the complete datasheet for Ixys IXSH30N60B2D1 to view detailed technical specifications.
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