N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 48A Max Collector Current. Features a 2V Collector-Emitter Saturation Voltage and 250W Max Power Dissipation. This through-hole component is housed in a TO-247-3 package, offering a wide operating temperature range from -55°C to 150°C. It is lead-free and RoHS compliant, with a typical turn-on delay time of 30ns and turn-off delay time of 130ns.
PackageTO-247-3
Current Rating48A
MountingThrough Hole
Power250W
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Technical Specifications
Ixys IXSH30N60B2D1 technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Current Rating
48A
Height
21.46mm
Input Type
STANDARD
Lead Free
Lead Free
Length
16.26mm
Max Collector Current
48A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Package Quantity
30
Packaging
Bulk
Power Dissipation
250W
Reverse Recovery Time
30ns
RoHS Compliant
Yes
Turn-Off Delay Time
130ns
Turn-On Delay Time
30ns
DC Rated Voltage
600V
Weight
0.229281oz
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXSH30N60B2D1 Datasheet
Download the complete datasheet for Ixys IXSH30N60B2D1 to view detailed technical specifications.
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