The IXSH30N60BD1 is a 600V insulated gate bipolar transistor with a maximum collector current of 55A. It is packaged in a TO-247-3 flange mount configuration and is suitable for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. With a maximum power dissipation of 200W, the IXSH30N60BD1 is designed for high-power applications.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXSH30N60BD1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 55A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXSH30N60BD1 Datasheet
Download the complete datasheet for Ixys IXSH30N60BD1 to view detailed technical specifications.
No datasheet is available for this part.