The IXSN35N100U1 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1kV and a maximum collector current of 38A. It features a SOT-227B package with 4 pins and is designed for chassis mount applications. The device operates over a temperature range of -40°C to 150°C and is RoHS compliant. With a maximum power dissipation of 205W, this IGBT is suitable for high-power switching applications.
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXSN35N100U1 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector-emitter Voltage-Max | 3.5V |
| Input | Standard |
| Input Capacitance | 4.5nF |
| Max Collector Current | 38A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 205W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXSN35N100U1 Datasheet
Download the complete datasheet for Ixys IXSN35N100U1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.