The IXSN50N60BD2 is a 600V insulated gate bipolar transistor with a maximum collector current of 75A. It is packaged in a SOT-227-4 case and is suitable for chassis mount applications. The device operates over a temperature range of -40°C to 150°C and is RoHS compliant. The IXSN50N60BD2 is manufactured by Ixys and is available in quantities of 10 per rail or tube packaging.
PackageSOT-227-4
MountingChassis Mount, Screw
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Technical Specifications
Ixys IXSN50N60BD2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input | Standard |
| Input Capacitance | 3.85nF |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXSN50N60BD2 Datasheet
Download the complete datasheet for Ixys IXSN50N60BD2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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