Ixys
IXSR40N60BD1
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
MountingThrough Hole
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Technical Specifications
Ixys IXSR40N60BD1 technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.2V |
| Input Type | STANDARD |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Weight | 0.186952oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXSR40N60BD1 Datasheet
Download the complete datasheet for Ixys IXSR40N60BD1 to view detailed technical specifications.
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