The IXST24N60BD1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 48A. It is packaged in a TO-268-3 surface mount package and has a maximum power dissipation of 150W. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. The IXST24N60BD1 is suitable for high-power applications requiring high current and voltage handling.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXST24N60BD1 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 48A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXST24N60BD1 Datasheet
Download the complete datasheet for Ixys IXST24N60BD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.