N-channel power MOSFET featuring 1200V drain-source breakdown voltage and 600mA continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 30-ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 42W. Designed for surface mounting in a TO-263-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 27ns fall time and a 50ns turn-off delay time.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
Ixys IXTA06N120P technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 30R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 32R |
| RoHS Compliant | Yes |
| Series | PolarVHV™ |
| Turn-Off Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA06N120P Datasheet
Download the complete datasheet for Ixys IXTA06N120P to view detailed technical specifications.
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