N-Channel Power MOSFET, 1kV Drain-Source Voltage (Vdss), 21 Ohm On-Resistance (Rds On Max), and 800mA Continuous Drain Current (ID). This silicon Metal-Oxide Semiconductor FET features a TO-263-3 package for surface mounting and supports a maximum power dissipation of 60W. With an input capacitance of 325pF, it operates across a temperature range of -55°C to 150°C and is lead-free and RoHS compliant.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXTA08N100D2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Voltage (Vdss) | 1kV |
| Input Capacitance | 325pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Rds On Max | 21R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA08N100D2 Datasheet
Download the complete datasheet for Ixys IXTA08N100D2 to view detailed technical specifications.
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