The IXTA102N15T is a high-power N-channel MOSFET from Ixys, featuring a maximum continuous drain current of 102A and a drain to source breakdown voltage of 150V. It has a maximum power dissipation of 455W and is designed for surface mount applications. The device operates within a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The IXTA102N15T has a gate to source voltage of 20V and an input capacitance of 5.22nF, with a fall time of 22ns and a turn-off delay time of 25ns.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power455W
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Technical Specifications
Ixys IXTA102N15T technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 102A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.22nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 455W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 455W |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA102N15T Datasheet
Download the complete datasheet for Ixys IXTA102N15T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.